Electrical and chemical analysis of Ti/Au contacts to<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>
نویسندگان
چکیده
Chemical and electrical measurements of Ti/(010) β-Ga2O3 Ti/(001) interfaces were conducted as a function annealing temperature using x-ray photoelectron spectroscopy (XPS), current density–voltage (J–V), capacitance–voltage (C–V) measurements. XPS revealed partial Ti oxidation at both in the as-deposited condition, with more on (001) epilayer surface than (010) substrate surface. The amount oxidized increased temperature. Schottky barrier heights for (unannealed) Au/Ti/(010) Au/Ti/(001) contacts determined from J–V C–V between 0.64 0.83 eV. Shifts core level peaks suggest that height decreases up to 350 °C 10-min anneals increases ≥460 °C. Taken together, results strong dependence reactivity surface, which can affect performance stability Ti/β-Ga2O3 ohmic elevated temperatures.
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ژورنال
عنوان ژورنال: APL Materials
سال: 2021
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0051340